field-effect photo transistor场效应光电晶体管
lateral field-effect transistor横向场效应晶体管
FET field-effect transistor场效晶体管
microwave field-effect transistor微波场效应晶体管
Fin Field-Effect Transistor鳍式场效晶体管;的这种鳍式场效晶体管
power field-effect transistor功率场效应晶体管
multichannel field-effect transistor[电子] 多沟道场效应管;翻译
silicon field-effect transistor硅场效应晶体管
field-effect transistor multiplier场效应管乘法器
To improve FET performance, the novel 4H-SiC metal-oxide-semiconductor field-effect transistor with implanted n-type layers near SiO2/SiC interface (4H-SiC BC-MOSFET) is presented in this paper.
为了提高场效应晶体管特性，本文介绍了一种新型结构的器件，简称4H-SiC埋沟MOSFET，就是在SiO2／SiC界面注入一层N型埋沟层。
The Field-effect transistor (FET) resistive mixers are attractive for application because of the advantages of very low distortion and low noise.
场效应管(FET)阻性混频器,因具有失真小,噪声低等优点,而表现出诱人的应用前景。
参考来源 - FET阻性混频器设计原理N（名词） a unipolar transistor consisting of three or more electrode regions, the source, one or more gates, and the drain. A current flowing in a channel between the highly doped source and drain is controlled by the electric field arising from a voltage applied between source and gate 场效应晶体管 ( abbr: FET) → see also JFET, IGFET